Memory
Samsung’s annual Memory Tech Day is taking place in San Jose this morning, and as part of the event, the company is making a couple of notable memory technology announcements/disclosures. The highlight of Samsung’s event is the introduction of Shinebolt, Samsung’s HBM3E memory that will set new marks for both memory bandwidth and memory capacity for high-end processors. The company is also disclosing a bit more on their GDDR7 memory, which will mark a significant technological update to the GDDR family of memory standards.
Samsung’s Fab in Hwaseong Suffers Power Outage
Samsung had to stop production of DRAM and V-NAND memory at its fab near Hwaseong, South Korea, due to power outage earlier this week. Damage caused by disruption of...
48 by Anton Shilov on 1/2/2020
Kioxia: 3D Stacked Storage Class Memory, like 3D XPoint, Isn’t the Future
One of the key battlegrounds of the next decade is going to be storage: density, speed, and demand. Naturally all the major players in the space want to promote...
23 by Dr. Ian Cutress on 12/30/2019
Micron Obtains License to Sell DRAM & NAND to Huawei
The inclusion of Huawei into the U.S. Department of Commerce’s Entity List and consequent restrictions to work with the Chinese giant clearly made it much harder for the U.S.-based...
12 by Anton Shilov on 12/19/2019
ADATA Reveals XPG Hunter SO-DIMMs: Up to DDR4-3000, Up to 32 GB
ADATA has introduced its new family of SO-DIMMs for laptops and small form-factor desktops. The XPG Hunter DDR4 SO-DIMMs offer data transfer rates of up to 3000 MT/s and...
6 by Anton Shilov on 12/17/2019
Samsung to Expand 3D NAND Fab in China
Samsung reportedly plans to invest billions of dollars to expand its 3D NAND production facility in Xian, China. If the company proceeds with the plan, bit production capacity of...
5 by Anton Shilov on 12/17/2019
Team Group’s T-Force Xtreem ARGB Memory: Up to DDR4-4800, ‘Mirror Design’
With even "extreme" clockspeed DDR4 modules bordering on being commodity hardware these days, DRAM module manufacturers are increasingly using design as one of the primary ways to attract attention...
0 by Anton Shilov on 12/9/2019
ChangXin Memory Technologies (CXMT) is Ramping up Chinese DRAM Using Qimonda IP
ChangXin Memory Technologies (CXMT), previously known as Innotron, has started production of computer memory using a 19 nm manufacturing technology. The company has a roadmap for at least two...
15 by Anton Shilov on 12/2/2019
Spotted at Supercomputing 2019: A 256 GB Gen-Z Memory Module
As a millennial, everything in the media that ‘Gen Z’ does often gets lumped into the millennial category. Thankfully there’s another type of Gen-Z in the world: the cache...
11 by Dr. Ian Cutress on 11/29/2019
GlobalFoundries and SiFive to Design HBM2E Implementation on 12LP/12LP+
GlobalFoundries and SiFive announced on Tuesday that they will be co-developing an implementation of HBM2E memory for GloFo's 12LP and 12LP+ FinFET process technologies. The IP package will enable...
13 by Anton Shilov on 11/5/2019
GIGABYTE Enhances Aorus RGB Memory with Aorus Memory Boost Capability
One of the advantages of having a highly-integrated product stack is ability to fine tune performance of your devices when they work together. On the one hand, this allows...
6 by Anton Shilov on 11/1/2019
GlobalFoundries Teams Up with Singapore University for ReRAM Project
GlobalFoundries has announced that the company has teamed up with Singapore’s Nanyang Technological University and the National Research Foundation to develop resistive random access memory (ReRAM). The next-generation memory...
6 by Anton Shilov on 10/28/2019
Samsung Launches Single-Chip uMCP Packages with LPDDR4X DRAM & UFS 3.0 Storage
Samsung has introduced a new lineup of all-in-one memory packages for smartphones that integrate both DRAM and storage. The latest generation of uMCP devices now feature up to 12...
30 by Anton Shilov on 10/24/2019
SK Hynix Develops 16 Gb DDR4 Chips for 32 GB Modules
SK Hynix announced on Monday that it has completed development of its first monolithic 16 Gb chip. This chip is to be made using its 3rd Generation 10 nm-class...
8 by Anton Shilov on 10/22/2019
Team Group Quietly Launches 32 GB DDR4 Memory Modules
Team Group has quietly added 32 GB unbuffered DDR4 memory modules to its product catalogue and plans to start sales in the near future. The modules will feature JEDEC-standard...
8 by Anton Shilov on 10/22/2019
Royal Memory: G.Skill’s 32 GB DDR4-4000 CL15 Kit for AMD & Intel
Bucking the trend of ever higher clocked DDR4 memory kits, G.Skill has introduced a new high-end memory kit that is focused on lower memory latencies. Compatible with both Intel...
14 by Anton Shilov on 10/21/2019
Corsair 16GB DDR4-5000 Vengeance LPX Memory Kit: Built for AMD Ryzen 3000 and MSI
The high-tech industry loves milestones that are round numbers, be it frequency, number of cores, transistor count or something else. It is not that extra 100 MHz – 200...
38 by Anton Shilov on 10/11/2019
G.Skill Launches 32 GB DDR4 Modules, 256 GB Kits: Up to DDR4-4000
G.Skill has now rolled out its 32 GB unbuffered DDR4 modules in dual-channel and quad-channel memory kits. The modules are offered with data transfer rates from 2666 MT/s to...
27 by Anton Shilov on 10/9/2019
Samsung Develops 12-Layer 3D TSV DRAM: Up to 24 GB HBM2
Samsung on Monday said that it had developed the industry’s first 12-layer 3D packaging for DRAM products. The technology uses through silicon vias (TSVs) to create high-capacity HBM memory...
11 by Anton Shilov on 10/7/2019
Gen-Z PHY Specification 1.1 Published: Adds PCIe 5.0, Gen-Z 50G Fabric
The Gen-Z Consortium this week released Physical Layer Specification 1.1 for Gen-Z interconnects. The new standard adds enhanced support for PCIe Gen 5 as well as Gen-Z 50G Fabric...
8 by Anton Shilov on 10/4/2019
Micron: 128-Layer 4th 3D NAND with RG Architecture Coming Soon
Micron has taped out its first 4th Generation 3D NAND memory devices with its new replacement gate (RG) architecture. The tape out confirms that the company is on track...
10 by Anton Shilov on 10/4/2019
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